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| NTE3036 Phototransistor Silicon NPN Photo Darlington Light Detector Description: The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for use in applications such as industrial inspection, processing and control, counter, sorters, switching and logic circuit or any design requiring very high radiation sensitivity at low light levels. Features: D Popular TO18 Type Hermetic Package for Easy Handling and Mounting D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application D Minimum Light Current: 12mA @ H = 0.5mW/cm2 D External Base for Added Control Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Light Current, IL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Static Characteristics Collector Dark Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdwon Voltage ICEO VCE = 10V, H 0 - 50 40 10 10 100 80 15.5 100 - - - nA V V V Symbol Test Conditions Min Typ Max Unit V(BR)CBO IC = 100A V(BR)CEO IC = 100A V(BR)EBO IE = 100A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Optical Characteristics Light Current Collector-Emitter Saturation Voltage Photo Current Rise Time Photo Current Fall Time IL VCE(sat) tr tf VCC = 5V, RL = 10, Note 1 IL = 10mA, H = 2mW/cm2 at 2870K RL = 10, IL = 1mA Peak, Note 2 RL = 10, IL = 1mA Peak, Note 2 12 - - - 20 0.6 15 65 - 1.0 100 150 mA V s s Symbol Test Conditions Min Typ Max Unit Note 1. Radiation flux density (H) is equal to 0.5mW/cm2 emitted from a tungsten source at a color temperature of 2780K. Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium- arsenide) light emitting diode ( 0.9m) with a pulse width equal to or greater than 500s, IL = 1mA peak. .228 (5.79) Max .185 (4.69) .177 (4.5) .276 (7.01) Max .500 (12.7) Min .018 (0.45) Dia Typ .100 (2.54) Dia Base Emitter Collector/Case |
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